Features

• High Surge Capability

DO-9 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

Unit

Repetitive peak reverse voltage

V

RMS reverse voltage

V

DC blocking voltage

V

Continuous forward current

A

Operating temperature

°C

Storage temperature

°C

Parameter

Symbol

Unit

Diode forward voltage

μA

mA

Thermal characteristics

Thermal resistance, junction -

case

°C/W

2. Reverse polarity (R): Stud is anode.

0.16

12

10

V

A

-55 to 150

6850

300

S300Y (R)

1600

1131

1600

300

6850

-55 to 150

S300Y thru S300ZR

Conditions

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Silicon Standard

Recovery Diode

Conditions

Surge non-repetitive forward

current, Half Sine Wave

• Types from 1600 V to 2000 V V

RRM

0.16

2000

1414

2000

1.2

S300Z (R)

-55 to 150

-55 to 150

S300Z (R)

S300Y (R)

1.2

10

12

Reverse current

C

A

A

C

Stud Stud

(R)

C

A

A

C

Stud Stud

(R)

DO-9 (DO--205AB)

9(DO205AB)

G

A

E

D

H

I

F

B

C

1

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/s300zr.pdf