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USF05G49 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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USF05G49 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() USF05G49 2004-07-06 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current and Repetitive Peak Reverse Current IDRM IRRM VDRM = VRRM = Rated ― ― 10 µA Peak On−State Voltage VTM ITM = 1A ― ― 1.5 V Gate Trigger Voltage VGT ― ― 0.8 V Gate Trigger Current IGT VD = 6V, RL = 100Ω RGK = 1kΩ ― ― 200 µA Holding Current IH ITM = 500mA, VD = 6V RGK = 1kΩ ― ― 6 mA Critical Rate of Rise of Off−State Voltage dv / dt VDRM = Rated, RGK = 1kΩ Exponential Rise ― 200 ― V / µs Gate Turn−On Time tgt VD = Rated, iG = 5mA RGK = 1kΩ ― ― 1.5 µs Thermal Resistance Rth(j−a) Junction to Ambient ― ― 70 °C / W Note: Thermal Resistance Test Condition Use 0.6×30×30mm Alumina Plate |
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