2N6341 datasheet(2/4 Pages) ONSEMI

2 / 4 page

2N6338 2N6341

http://onsemi.com

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

2N6338

(IC = 50 mAdc, IB = 0)

2N6341

VCEO(sus)

100

150

–

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

2N6338

(VCE = 75 Vdc, IB = 0)

2N6341

ICEO

–

µAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C)

ICEX

–

1.0

µAdc

mAdc

Collector Cutoff Current (VCB = Rated VCB, IE = 0)

ICBO

–

µAdc

Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)

IEBO

–

100

µAdc

ON CHARACTERISTICS (1)

DC Current Gain)

(IC = 0.5 Adc, VCE = 2.0 Vdc)

(IC = 10 Adc, VCE = 2.0 Vdc)

(IC = 25 Adc, VCE = 2.0 Vdc)

hFE

–

120

–

Collector Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 25 Adc, IB = 2.5 Adc)

VCE(sat)

–

1.0

1.8

Vdc

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 25 Adc, IB = 2.5 Adc)

VBE(sat)

–

1.8

2.5

Vdc

Base–Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)

VBE(on)

–

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product (2)

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)

–

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

–

300

SWITCHING CHARACTERISTICS

Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc)

–

0.3

µs

Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

–

1.0

µs

Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

–

0.25

µs

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

(2) fT = |hfe| • ftest.

Figure 2. Switching Time Test Circuit

1000

0.3

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

500

100

0.5 0.7

2.0 3.0

7.0

+ 11 V

VCC

SCOPE

10 OHMS

- 5.0 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

8.0 OHMS

5.0

10 µs

- 9.0 V

700

200

300

1.0

NOTE: For information on Figures 3 and 6, RB and RC were

varied to obtain desired test conditions.

+ 80 V

1N4933

td @ VBE(off) = 6.0 V

VCC = 80 V

IC/IB = 10

TJ = 25°C

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