P2003ED datasheet(2/5 Pages) ETC1

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P2003ED

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

-30

-1.0

-1.6

-3.0

±100

-100

1600

362

266

-32

-1

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Gate-Drain Charge

Gate-Source Charge

Drain-Source On-State

Resistance

RDS(ON)

Ciss

Coss

Crss

Qgd

VGS = -10V, ID = -18A

STATIC

Gate Resistance

Output Capacitance

Forward Voltage

Reverse Recovery Time

mΩ

On-State Drain Current

ID(ON)

IF = -18A, dlF/dt = 100A / mS

VDS = -15V, ID@ -18A,

VGS = -10V, RGEN = 6Ω

VDS = -5V, VGS = -10V

VSD

Qrr

Fall Time

td(on)

td(off)

Input Capacitance

Qg(VGS = 10V)

VDS = 0.5V(BR)DSS, VGS = -10V,

ID = -18A

TEST CONDITIONS

Reverse Recovery Charge

Continuous Current

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

IF = -1A, VGS = 0V

trr

Drain-Source Breakdown Voltage

VGS = -4.5V, ID = -12A

VDS = -5V, ID = -12A

VGS(th)

Forward Transconductance

VGS = 0V, ID = -250mA

V(BR)DSS

Zero Gate Voltage Drain Current

Gate-Body Leakage

Qgs

Reverse Transfer Capacitance

VGS = 0V, VDS = -15V, f = 1MHz

gfs

Gate Threshold Voltage

DYNAMIC

IGSS

VDS = -24V, VGS = 0V

IDSS

LIMITS

UNIT

Total Gate Charge

Qg(VGS = 4.5V)

PARAMETER

SYMBOL

VGS = 0V, VDS = 0V , f = 1MHZ

VDS = -20V, VGS = 0V , TJ = 55 °C

VDS = VGS, ID = -250mA

VDS = 0V, VGS = ±25V

Ver 1.1

2013-3-21

P2003ED Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

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