HM2526 datasheet(4/14 Pages) HMSEMI

4 / 14 page

Electrical Characteristics（Ta=25℃，VCC=3V，VDD=6V ,unless otherwise specified）

Parameter

Symbol Conditions

Min

Typ

Max

Unit

Power supply parameters

VCC Standby current

IVCCST

INA=INB=L;VCC=3V;

VDD=9V; with Output open

0.1

VDD Standby current

IVDDST

0.1

VCC static supply current

IVCC

INA=H or INB=H; with Output open

175

VDD static supply current

IVDD

Input logic level

Input high voltage

VINH

Input low voltage

VINL

0.8

Input level hysteresis

VINHYS

0.6

Input high current

IINH

VINH=3V,VCC=3V

300

Input pull-down resistor

RIN

VINH=3V,VCC=3V

KΩ

Power transistor on-resistance

On-resistance

RON1

IO=±200mA VDD=6V TA=25℃

0.3

IO=±1A VDD=6.5V TA=25℃

0.31

Protection function parameters

Thermal shutdown

temperature point

TSD

150

℃

Thermal shutdown

hysteresis

TSDHYS

130

Power MOSFET diode conduction characteristics

PMOS body diode

VPD

I=400mA,VCC=3V,VDD=INA=I

NB=0V

0.76

NMOS body diode

VND

I=-400mA,VCC=VDD=3V,INA=I

NB=0V

0.75

Motor driving time parameters

Output rise time

VCC=5V,VDD =5V,INB=H,

INA is input pulse signal;

Signal duty cycle is 50% and

the signal frequency is 20 kHz

Load motor internal resistance

1.3Ω, motor idling

200

Output fall time

Output delay time

trf

Output delay time

tfr

400

HM2526 Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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