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TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
1-39
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HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.
Characteristics @ Ta = +25° C
Reverse breakdown voltage,
Vb = @ 10 µA: 20 V min.
Reverse current,
Ir @ 16 V:
200 nA
Figure of
Total capacitance (pF)
Tuning
merit (Q)
Ct
ratio
Test
f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz
Ct1V/Ct12V
Ct1V/CT20V
conditions
Vr = 4 V
Vr = 1 V
Vr = 4 V
Vr = 12 V
Vr = 20 V
f = 1 MHz
f = 1 MHz
Type
Case (1)
typ.
typ.
±20%
typ.
typ.
typ.
typ.
Chip
DH76010
F27d
2200
2.5
1.2
0.6
0.5
4.1
4.9
EH76010
DH76015
F27d
2000
3.6
1.7
0.8
0.7
4.4
5.4
EH76015
DH76022
F27d
1700
5.2
2.4
1.1
0.9
4.7
5.8
EH76022
DH76033
F27d
1400
7.7
3.5
1.6
1.3
4.9
6.1
EH76033
DH76047
F27d
1000
11
4.9
2.2
1.7
5.0
6.4
EH76047
DH76068
F27d
700
16
6.9
3.0
2.4
5.1
6.5
EH76068
DH76100
F27d
400
23
10.2
4.5
3.5
5.2
6.7
EH76100
DH76150
F27d
140
34
15.2
6.6
5.1
5.2
6.8
EH76150
(1)
Custom cases available on request
Temperature ranges:
Operating junction (Tj) : -55° C to +150° C
Storage
: -65° C to +150° C
Typical junction capacitance reverse voltage
VR (V)
0.10
1.00
0.1
0.01
100
100.00
Profils in Cj
76010
76015
76022
76033
76047
76068
76100
76150
10
10.00
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