6Amps，400V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

730H

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Off Characteristics

Drain-source breakdown voltage

400

-

-

V

Zero gate voltage drain current

-

-

1

μA

ºC

-

-

10

μA

Gate-body leakage

current

Forward

-

-

100

nA

Reverse

-

-

-100

nA

Breakdown voltage temperature

-

0.54

-

V/

ºC

On characteristics

Gate threshold voltage

μA

2.0

-

4.0

V

Static drain-source on-resistance

-

0.83

1.0

Ω

Dynamic characteristics

Input capacitance

f=1MHz

-

520

-

pF

Output capacitance

-

80

-

pF

Reverse transfer capacitance

-

15

-

pF

Switching characteristics

Turn-on delay time

-

10

-

ns

Rise time

-

60

-

ns

Turn-off delay time

-

20

-

ns

Fall time

-

40

-

ns

Total gate charge

-

18

-

nC

Gate-source charge

-

2.5

-

nC

Gate-drain charge

-

8.5

-

nC

Drain-source diode characteristics

Drain-source diode forward voltage

-

-

1.4

V

Continuous Drain-source current

-

-

6.0

A

Pulsed Drain-source current

-

-

24.0

A

Reverse recovery time

μs (note 4)

-

250

-

ns

Reverse recovery charge

-

2.0

-

μC

Note: 1.Repetitive Rating:Pulse width limited by maximum junction temperature

4.Pulse test:pulse width<300

μs,duty cycle<2%

5.Essentially independent of operating temperature

3 of6

Rev 1.1 JAN 2014