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2302 Datasheet(PDF) 1 Page - KIA Semiconductor Technology |
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2302 Datasheet(HTML) 1 Page - KIA Semiconductor Technology |
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1 / 4 page  3.0A， 20V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2302 KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1. Features n VDS=20V,RDS(on)=0.065 Ω@VGS=4.5V,ID=3.0A n VDS=20V,RDS(on)=0.090 Ω@VGS=2.5V,ID=2.0A 2.Symbol 3. Absolute maximum ratings Parameter Symbol Rating Units Drain-source voltage VDS 20 V Gate-source voltage VGS +8 V Drain current continuous (TJ=150 ºC) b TA=25°C ID 3.0 A TA=70°C 2.0 Pulsed drain current a IDM 10 Continuous source current (diode conduction)b IS 1.6 Power dissipation b TA=25°C PD 1.25 W TA=70 °C 0.8 Junction and storage temperature range TJ,TSTG -55 to150 ºC Parameter Symbol Rating Units Maximum junction-ambient b RthJA 100 ºC/W Maximum junction-ambient c 166 Notes a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t<5 sec. c. Surface mounted on FR4 board. 1 of4 Rev 1.1 JAN 2014 Pin Function 1 Gate 2 Source 3 Drain |
Similar Part No. - 2302 |
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Similar Description - 2302 |
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