-3.3A，-20V

P-CHANNEL MOSFET

KIA

SEMICONDUCTORS

2341

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

4. Absolute maximum ratings

°C,unless otherwise noted)

Parameter

Symbol

5s

Steady

State

Units

Drain-source voltage

-20

V

Gate-source voltage

+12

V

-

-3.3

A

Pulsed drain current

-20

A

-1.7

-1

A

°C

1.25

0.75

W

Junction and storage temperature range

-55 to150

ºC

a.

Surface mounted on FR4 board using 1 in sq pad size, 2oz Cu.

Parameter

Symbol

Typ

Max

Units

75

100

ºC/W

125

165

ºC/W

b. Surface mounted on FR4 board using 1 in sq pad size, 2oz Cu

5. Electrical characteristic

°C,unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Drain-source breakdown voltage

μA

-20

-

-

V

Gate- source leakage current

-

-

+100

nA

Zero gate voltage drain current

-

-

-1

uA

Gate threshold voltage*

-0.35

-0.63

-1.0

V

Static drain-source on-resistance

-

52

61

m

Ω

-

65

71

Forward transconductance

gfs

-

3.0

-

S

Input capacitance

f=1MHz

-

-

700

pF

Output capacitance

-

-

160

Reverse transfer capacitance

-

-

120

Turn-on delay time

Ω,

-

-

25

ns

Rise time

-

-

55

Turn-off delay time

-

-

90

Fall time

-

-

60

Total gate charge

-

8

13

nC

Threshold gate charge

0.2

Gate-source charge

-

1.2

-

Gate-drain charge

-

2.2

-

Forward diode voltage

-

-0.8

-

V

2 of5

Rev 1.1 JAN 2014