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3710Z Datasheet(PDF) 4 Page - KIA Semiconductor Technology |
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3710Z Datasheet(HTML) 4 Page - KIA Semiconductor Technology |
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4 / 7 page ![]() 59A 100V N-CHANNEL POWER MOSFET TRANSISTOR 7.Source-drain ratings and characteristics (TJ=25°C,unless otherwise notes) Notes: 1. Repetitive rating;pulse width limited by max. junction temperature. 2. Pulse test,t<300 μs;duty cycle<2%. 3. TJ=+125 °C. 4 of7 Parameter Symbol Conditions Min. Typ. Max. Untis Diode forward voltage2) VSD VGS=0V,IS=35A - - 1.3 V Continuous source current (body diode) IS VGS=0V - - 59 A Pulsed source current (body diode) ISM repetitive,pulse width limited byTJM - - 240 Reverse recovery time2) trr IF=35A,VDD=25V di/dt=100A/ μs - 56 75 ns Reverse recovery charge2) Qrr - 106 160 nC KIA SEMICONDUCTORS 3710Z |
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