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08065A Datasheet(PDF) 2 Page - KIA Semiconductor Technology

Part # 08065A
Description  8A竊?50V Silicon Carbide Diode
PDF  3 Pages
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Manufacturer  KIA [KIA Semiconductor Technology]
Direct Link  http://en.kiaic.com/
Logo KIA - KIA Semiconductor Technology

08065A Datasheet(HTML) 2 Page - KIA Semiconductor Technology

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8A，650V
Silicon Carbide Diode
KIA
SEMICONDUCTORS
08065A
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
5. Absolute Maximum Ratings
(TJ=25ºC unless otherwise noted)
Parameter
Symbol
Rating
Units
Repetitive Peak Reverse Voltage
VRRM
650
V
Surge Peak Reverse voltage
VRSM
650
V
DC Blocking Voltage
VDC
650
V
Continuous forward current
TC = 25ºC
TC = 135ºC
TC = 150ºC
I F
24
11
8
A
Repetitive Peak Forward Current
I FRM
56
A
Surge no repetitive forward current
IFSM
72
A
Power Dissipation
TC = 25ºC
TC = 110ºC
Ptot
107
46
W
Operating Junction and storage temperature
TJ,Tstg
-55 to +175
ºC
6. Thermal characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Thermal resistance
R th(J
-C)
-
-
2.8
-
ºC/W
7. Electrical characteristics
Parameter
Symbol
Conditions
Rating
Unit
Min
Typ
Max
Gate Threshold Voltage
VF
IF=8A
TC=25
°C
-
1.4
1.8
V
TC=175°C
-
2.1
3
Reverse Current
IR
VR=650V
TC=25
°C
-
10
60
μA
TC=175°C
-
48
500
Total Capacitive Charge
Qc
VR =400V, IF =8A
TJ = 25
°C
vr
QC=
ò0 C （V）dv
-
25
-
nC
Total Capacitance
C
TJ = 25 °C,
f = 1MHz
VR=0V
-
440
-
pF
VR=200V
54
VR=400V
40
Capacitance Stored Energy
EC
VR=400V
-
5
-
μJ
2 of3
Rev 1.0 JULY 2018



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