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STB11NB40T4 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB11NB40T4
Description  N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB11NB40T4 Datasheet(HTML) 3 Page - STMicroelectronics

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STB11NB40/STB11NB40-1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 6. Off
Table 7. On (1)
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Table 8. Dynamic
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA; VGS = 0
400
V
IDSS
Zero Gate Voltage
VDS = Max Rating
1
µA
Drain Current (VGS = 0)
VDS = Max Rating Tc = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
± 100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS; ID = 250 µA3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V; ID = 5.3 A
0.48
0.55
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
(1)
Forward
Transconductance
VDS > ID(on) x RDS(on)max; ID = 5.3 A
5
6.5
S
Ciss
Input Capacitance
VDS = 25 V; f = 1 MHz; VGS = 0
1115
1450
pF
Coss
Output Capacitance
210
280
pF
Crss
Reverse Transfer
Capacitance
22
30
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Time
VDD = 200 V; ID = 5.3 A; RG = 4.7 Ω
17
25
ns
tr
Rise Time
VGS = 10 V (see test circuit, Figure 16)
10
15
ns
Qg
Total Gate Charge
VDD = 320 V; ID = 10.7 A; VGS = 10 V
29.5
43
nC
Qgs
Gate-Source Charge
10.6
nC
Qgd
Gate-Drain Charge
11.8
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 320 V; ID = 10.7 A; RG = 4.7 Ω
10
14
ns
tf
Fall Time
VGS = 10 V; (see test circuit, Figure 18)
10
14
ns
tc
Cross-over Time
17
25
ns



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