HM35P03D datasheet(2/7 Pages) HMSEMI

2 / 7 page

Page

v1.0

Zero Gate Voltage Drain Current

IDSS

VDS=-30V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-1

-1.75

-2.2

VGS=-10V, ID=-

10A

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-

7.0A

11.5

mΩ

Forward Transconductance

gFS

VDS=-15V,ID=-9.1A

Dynamic Characteristics (Note4)

Input Capacitance

Clss

1600

Output Capacitance

Coss

350

Reverse Transfer Capacitance

VDS=-15V,VGS=0V,

Crss

F=1.0MHz

300

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

(off)

110

Turn-Off Fall Time

VDD=-15V, ID=-1A,

VGS=-10V,RGEN=6Ω

Total Gate Charge

Gate-Source Charge

Qgs

5.5

Gate-Drain Charge

Qgd

VDS=-15V,ID=-9.1A

VGS=-10V

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-2.1A

-1.2

Notes:

Rating: Pulse width limited by maximum junction temperature.

1. Repetitive

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to productio

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

HM35P03D

HM35P03D Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM35P03D Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL