HM35P04D datasheet(2/7 Pages) HMSEMI

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v1.0

Thermal Characteristic

Thermal Resistance, Junction-to-Case(Note 2)

RθJC

1.92

℃

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-40

Zero Gate Voltage Drain Current

IDSS

VDS=-40V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-1.2

-1.9

-2.5

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-20A

7.5

mΩ

Forward Transconductance

gFS

VDS=-10V,ID=-20A

Dynamic Characteristics (Note4)

Input Capacitance

Clss

6460

Output Capacitance

Coss

684

Reverse Transfer Capacitance

Crss

VDS=-20V,VGS=0V,

F=1.0MHz

600

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-20V, RL=2Ω，

VGS=-10V,RG=1Ω

Total Gate Charge

106

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=-20,ID=-20A,

VGS=-10V

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-10A

-1.2

Diode Forward Current (Note 2)

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF =- 10A

di/dt = -100A/μs(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω,IAS=45A

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

HM35P04D

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