RN1412,RN1413

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1412,RN1413

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2412, RN2413

Equivalent Circuit

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

−55~125

°C

°°°°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

―

―

―

100

nA

Emitter cut-off current

―

―

―

100

nA

DC current gain

―

120

―

700

Collector-emitter saturation voltage

―

―

0.1

0.3

V

Transition frequency

―

―

250

―

MHz

Collector output capacitance

―

―

3

6

pF

RN1412

15.4

22

28.6

Input resistor

RN1413

R1

―

―

32.9

47

61.1

k

W

JEDEC

TO-236MOD

EIAJ

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g

Unit: mm