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BAV99LT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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BAV99LT3 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() BAV99LT1 http://onsemi.com 2 OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage, (I(BR) = 100 mA) V(BR) 70 − Vdc Reverse Voltage Leakage Current, (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) IR − − − 2.5 30 50 mAdc Diode Capacitance, (VR = 0, f = 1.0 MHz) CD − 1.5 pF Forward Voltage, (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − 715 855 1000 1250 mVdc Reverse Recovery Time, (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W trr − 6.0 ns Forward Recovery Voltage, (IF = 10 mA, tr = 20 ns) VFR − 1.75 V |
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