IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGR 40N60C

IXGR 40N60CD1

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

30

40

S

Pulse test, t

£ 300 ms, duty cycle £ 2 %

C

ies

3300

pF

40N60C

310

pF

C

oes

V

370

pF

C

res

65

pF

Q

g

116

nC

Q

ge

I

23

nC

Q

gc

55

nC

t

d(on)

25

n s

t

ri

30

n s

t

d(off)

100

150

ns

t

fi

75

150

ns

E

off

0.85

1.70

mJ

t

d(on)

25

n s

t

ri

35

ns

E

on

40N60C

0.4

mJ

t

d(off)

40N60CD1

1.2

mJ

t

fi

150

ns

105

ns

E

off

1.2

mJ

R

thJC

0.6 K/W

R

thCK

0.15

K/W

Inductive load, T

I

V

Remarks: Switching times may increase

for V

increased R

G

Inductive load, T

I

V

Remarks: Switching times may increase for

V

increased R

G

ISOPLUS 247 OUTLINE

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80 21.34

.819 .840

E

15.75 16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81 20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

1 Gate, 2 Drain (Collector)

3 Source (Emitter)

4 no connection

ReverseDiode(FRED)(IXGH40N60CD1only)

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

V

F

I

T

1.3

V

Note 1

T

25°C

1.8

V

I

RM

I

T

7.5

A

-di

t

rr

I

3.5

ns

R

thJC

0.90 K/W

Note:

1. Pulse test, t

2. I