Features

• High Surge Capability

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT60020(R) MBRT60030(R)

Unit

Repetitive peak reverse voltage

20

30

V

RMS reverse voltage

14

21

V

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRT60020(R) MBRT60030(R)

Unit

Average forward current (per

pkg)

600

600

A

Maximum instantaneous

forward voltage (per leg)

0.75

0.75

1

1

10

10

50

50

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

0.28

0.28

°C/W

Silicon Power

Schottky Diode

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

50

0.28

MBRT60020 thru MBRT60040R

Conditions

MBRT60040(R)

35

25

MBRT60035(R)

-55 to 150

-55 to 150

MBRT60040(R)

1

1

MBRT60035(R)

mA

0.28

0.75

0.75

50

10

10

V

-55 to 150

-55 to 150

Conditions

40

28

40

35

A

• Types from 20 V to 40 V V

RRM

600

600

Peak forward surge current

(per leg)

4000

4000

4000

4000

1

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrt60020.pdf