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S8012R Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # S8012R
Description  isc Thyristors
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

S8012R Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  S8012R Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
S8012R
DESCRIPTION
·
With TO-220 packaging
·
High heat dissipation and durability
·
Thermowatt construction for low thermal
·
Glass passivated junctions and center gate fire for greater
parameter uniformity and stability
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
800
V
VRRM
Repetitive peak reverse voltage
800
V
IT(RMS)
RMS on-state current
Tc=105℃
12
A
ITSM
Surge non-repetitive on-state current
( 1/2 cycle,sine wave;Tc=25℃ )
50Hz
60Hz
120
100
A
PG(AV)
Average gate power dissipation
0.5
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM
VDM=VDRM
Tj=25℃
Tj=100℃
Tj=125℃
0.02
0.5
1
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
ITM= 12A
1.6
V
IGT
Gate-trigger current
VD = 12 V; RL=33Ω
1
20
mA
VGT
Gate-trigger voltage
VD = 12 V; RL=33Ω
1.5
V
Rth(j-c)
Thermal resistance
Junction to case
1.3
℃
/W


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