MBRH200200 datasheet(1/3 Pages) GENESIC

Part #	MBRH200200

Description	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 150 V - 200 V

IF(AV) = 200 A

Features

• High Surge Capability

D-67 Package

• Not ESD Sensitive

Parameter

Symbol

MBRH200150(R)

Unit

Repetitive peak reverse

voltage

VRRM

150

V

RMS reverse voltage

VRMS

106

V

DC blocking voltage

VDC

150

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRH200150(R)

Unit

Average forward current (per

pkg)

IF(AV)

200

A

Maximum instantaneous

forward voltage

0.88

1

10

50

Thermal characteristics

Thermal resistance, junction-

case

RΘJC

0.35

°C/W

A

Tj = 100 °C

10

Peak forward surge current

IFSM

tp = 8.3 ms, half sine

3000

mA

V

• Types from 150 V to 200 V V

RRM

Conditions

150

3000

TC = 125 °C

200

MBRH200150 thru MBRH200200R

Tj = 25 °C

IFM = 200 A, Tj = 25 °C

Conditions

200

141

MBRH200200(R)

-55 to 150

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

MBRH200200(R)

0.92

Silicon Power

Schottky Diode

-55 to 150

50

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage

IR

VF

1

0.35

Tj = 150 °C

1

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrh200150.pdf

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