Absolute Maximum Ratings ( T
J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(AV)
Average On-State Current
Half Sine Wave : TC = 69 °C
16
A
IT(RMS)
R.M.S On-State Current
180° Conduction Angle
25
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
275
A
I2t
I2t for Fusing
t = 8.3ms
380
A2s
di/dt
Critical rate of rise of on-state current
50
A/㎲
PGM
Forward Peak Gate Power Dissipation
20
W
PG(AV)
Forward Average Gate Power Dissipation
Over any 20ms period
1
W
IFGM
Forward Peak Gate Current
5
A
VRGM
Reverse Peak Gate Voltage
5.0
V
VISO
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
1500
V
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
SCF25C60
Aug, 2003. Rev. 1
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( IT(RMS)= 25 A )
◆
Low On-State Voltage (1.3V(Typ.)@ ITM)
◆
Isolation Voltage ( VISO = 1500V AC )
3. Gate
1. Cathode
Symbol
○
○
1/5
SemiWell Semiconductor
Silicon Controlled Rectifiers
TO-220F
○
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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