IXFN39N90 datasheet(1/5 Pages) IXYS

Part #	IXFN39N90

Description	Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

39

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

154

A

I

A

T

C = 25°C39

A

E

AS

T

C = 25°C4

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C

694

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 minute

2500

V~

I

ISOL ≤ 1mA

t = 1 second

3000

V~

M

d

Mounting Torque

1.5/13

Nm/lb.in.

Terminal Connection Torque

1.3/11.5

Nm/lb.in.

Weight

30

g

HiPerFETTM

Power MOSFET

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated

IXFN39N90

V

DSS

= 900V

I

D25

= 39A

R

DS(on) ≤

≤≤≤≤ 220mΩ

Ω

t

rr

≤≤≤≤≤ 250ns

Features

International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

Temperture and Lighting Controls

Either Source Terminal at miniBLOC

can be used as Main or Kelvin Source.

miniBLOC, SOT-227

E153432

G

D

S

G = Gate

D = Drain

S = Source

DS98628C(6/13)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V

DSS

V

GS = 0V, ID = 3mA

900

V

BV

DSS

Temperature Dependence

3.68

V/K

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

GS(th)

Temperature Dependence

-0.009

V/K

I

GSS

V

GS = ±20V, VDS = 0V

±200 nA

I

DSS

V

DS = VDSS, VGS = 0V

100

μA

T

J = 125°C

2 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

220 m

Ω

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