HM2506 datasheet(4/6 Pages) HMSEMI

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6. ELECTRICAL CHARACTERISTICS

6.1 Absolute Maximum Rating

Symbol

Parameter

Rating

Unit

VDD - VSS

Supply voltage

-0.5 ~ +7.0

IOUT-PEAK

Output peak current

1.2

θJA

Thermal resistance

(Junction to Ambient)

SOT23-6

180

°C/W

SOP-8

150

Power dissipation

SOT23-6

0.75

SOP-8

0.9

Operating ambient temperature

-40 ~ +85

°C

Operating junction temperature

+160

°C

TST

Storage temperature

-55 ~ +150

°C

6.2 DC Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

Condition

VDD

Operating voltage

1.8

6.4

ISB

Standby current

0.1

IN1=IN2=0

IOP

Operating

current

VDD = 3.0V

IN1=1, IN2=0 or

IN1=0, IN2=1 or

IN1=1, IN2=1

VDD = 4.5V

110

IIH

Input high current

(12kΩ pull-low resistance)

250

VIH = 3.0V

370

VIH = 4.5V

VIH

Input high voltage

2.0

VIL

Input low voltage

0.8

RON

Output resistance

(SOT23-6 Package)

0.71

IOUT = 200mA

0.77

IOUT = 500mA

0.90

IOUT = 800mA

Output resistance

(SOP-8 Package)

0.70

IOUT = 200mA

0.74

IOUT = 500mA

0.85

IOUT = 800mA

IOUT

Output continuous current

(* with PCB heat dissipation)

800

950*

SOT23-6

900

1050*

SOP-8

IPULSE

Pulsed drain current

2.5

Pulse width < 20ms

TRISE

Output rise time

400

PWM=20kHz, Duty=50%

TFALL

Output fall time

150

TRP

Input-to-Output response time

460

TTSD

Thermal shutdown (TSD)

160

°C

Junction temperature

TTSDH

Thermal shutdown hysteresis

°C

(VDD=4.5V, TA=25ºC, unless otherwise specified)

HM2506 Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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