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BCW72LT1 Datasheet(PDF) 2 Page - ON Semiconductor

Part # BCW72LT1
Description  General Purpose Transistor(NPN Silicon)
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BCW72LT1 Datasheet(HTML) 2 Page - ON Semiconductor

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BCW72LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
200
—
450
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 50 mAdc, IB = 2.5 mAdc)
VCE(sat)
—
—
—
0.21
0.25
—
Vdc
Base – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 2.5 mAdc)
VBE(sat)
—
0.85
—
Vdc
Base – Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.6
—
0.75
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
—
300
—
MHz
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cobo
—
—
4.0
pF
Input Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cibo
—
9.0
—
pF
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz)
NF
—
—
10
dB
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+ 3.0 V
275
CS < 4.0 pF*
10 k
+ 3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
– 0.5 V
<1.0 ns
10 < t1 < 500 µs
DUTY CYCLE = 2%
+10.9 V
0
– 9.1 V
< 1.0 ns
t1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10
20
50
100
200
500
1 k
2 k
5 k
10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100
µA
30
µA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
10
µA
300
µA
IC = 1.0 mA
300
µA
100
µA
30
µA
10
µA
10
20
50
100
200
500
1 k
2 k
5 k
10 k



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