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HM8581 Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM8581 Datasheet(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 6 page ![]() (VS = +2.7V, VCM = +1.35V, VO = +1.35V, TA = +25℃, unless otherwise noted.) Symbol Parameter Conditions Min. Typ. Max. Unit INPUT CHARACTERISTICS VOS Input Offset Voltage — 80 100 μV IB Input Bias Current 75 pA IOS Input Offset Current 5 pA CMRR Common-Mode Rejection Ratio VCM = 0V to 2.7V 110 dB AVO Large Signal Voltage Gain RL = 10kΩ VO=0.3V~2.4V 140 dB ∆VOS/∆T Input Offset Voltage Drift 20 nV/℃ OUTPUT CHARACTERISTICS VOH Output Voltage High RL = 100kΩ to -VS 2.699 V RL = 10kΩ to -VS 2.697 V VOL Output Voltage Low RL = 100kΩ to +VS 1 mV RL = 10kΩ to +VS 2 mV ISC Short Circuit Limit RL =10Ω to -VS 26 mA IO Output Current 10 mA POWER SUPPLY PSRR Power Supply Rejection Ratio VS = 2.7V to 5.5V 115 dB IQ Quiescent Current VO = 0V, RL = 0Ω 450 μA DYNAMIC PERFORMANCE GBP Gain-Bandwidth Product G = +100 1.43 MHz SR Slew Rate RL = 10kΩ 0.84 V/μs TOR Overload Recovery Time 0.04 ms NOISE PERFORMANCE en p-p Voltage Noise 0Hz to 10Hz 0.90 μVp-p en Voltage Noise Density f = 1kHz 53 nV/ Hz / / |
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