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HM8875 Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM8875
Description  5W single channel boost anti-breaking class F amplifier
PDF  9 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM8875 Datasheet(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Boost Module and D MODE Electrical Characteristics
(VDD =5V, Gain=20dB, RL =4Ω, T =25°C, unless otherwise noted.)
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
UNIT
VDD
Supply Voltage
3.2
-
6.0
V
PO
Output Power
THD+N=10%,f=1kHz,RL=4 Ω
VDD=5.0V
5
W
VDD=3.6V
4.3
THD+N=1%,f=1kHz,RL=4 Ω
VDD=5.0V
3.6
W
VDD=3.6V
3.6
THD+N
Total Harmonic
Distortion Plus Noise
VDD=5.0V, PO=2W, RL=4 Ω
f=1kHz
0.1
%
VDD=3.6V, PO=1W, RL=4 Ω
0.1
GV
Gain
Ri = 33K
23.5
dB
PSRR
Power Supply Ripple
Rejection
VDD=5V±200mVp-p
f=1kHz
60
dB
SNR
Signal-to-Noise Ratio
VDD=5.0V, Vo rms=1V,
GV=20dB
f=1kHz
85
dB
Vn
Output Noise
VDD=5.0V,Input floating with
CIN=0.1μF
A-weighting
120
μV
No
A-weighting
180
Dyn
Dynamic Range
VDD=5.0V,THD=1%
f=1kHz
90
dB
IQ
Quiescent Current
VDD=5.0V
No Load
10
mA
VDD=3.2V
5
ISD
Shutdown Current
VDD=3.2V to 6V
VSD=0V
10
μA
Vos
Offset Voltage
VDD=5V
10
mV
Fosc
Oscillator Frequency
300
kHz
Tst
Setup Time
Bypass capacitor =1uF
300
mS
OTP
－
No Load, Junction
Temperature
VDD=5.0V
180
°C
OTH
－
40
Boost Module Electrical Characteristics
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
UNIT
Fsw
Boost Frequency
VDD=5.0V
600
kHz
PVDD
Boost output Voltage
VDD=5.0V
6.5
V
Ilim
Boost input current limit
VDD=5.0V
5
A
HM8875
5W 单通道升压防破音 F 类功放



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