BSP50 datasheet(2/5 Pages) ONSEMI

2 / 5 page

Rev. A, May 2004

Absolute Maximum Ratings* T

a=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150

°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics T

a=25°C unless otherwise noted

Thermal Characteristics T

A=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCER

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current

- Continuous

800

TJ, TSTG

Operating and Storage Junction Temperature Range

- 55 ~ +150

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100µA, IE = 0

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10µA, IC = 0

ICES

Collector Cutoff Current

VCE = 45V, VBE = 0

IEBO

Emitter Cutoff Current

VEB = 4.0V, IC = 0

On Characteristics

hFE

DC Current Gain

IC = 150mA, VCE = 10V

IC = 500mA, VCE = 10V

1000

2000

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 500mA, IB = 0.5mA

1.3

VBE(sat)

Base-Emitter Saturation Voltage

IC = 500mA, IB = 0.5mA

1.9

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25

°C

1000

8.0

mW/

°C

RθJA

Thermal Resistance, Junction to Ambient

125

°C/W

BSP50

NPN Darlington Transistor

• This device is designed for applications requiring extremly high current

gain at collector currents to 500mA.

• Sourced from process 03.

SOT-223

1. Base 2. Collector 3. Emitter

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