FJB3307DTM datasheet(3/9 Pages) ONSEMI

3 / 9 page

www.fairchildsemi.com

Rev. 1.1.0

Thermal Characteristics

Electrical Characteristics(2)

Values are at TA = 25°C unless otherwise noted.

Note:

2. Pulse test: pw = 300 µs, duty cycle = 2%.

hFE Classification

Symbol

Parameter

Value

Units

Total Device Dissipation

TA = 25°C

1.72

TC = 25°C

Rθja

Thermal Resistance, Junction to Ambient

72.5

°C/W

Rθjc

Thermal Resistance, Junction to Case

1.56

°C/W

Symbol

Parameter

Conditions

Min.

Typ. Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC = 500 µA, IE = 0

700

BVCEO

Collector-Emitter Breakdown Voltage

IC = 5 mA, IB = 0

400

BVEBO

Emitter-Base Breakdown Voltage

IE = 500 µA, IC = 0

IEBO

Emitter Cut-Off Current

VEB = 9 V, IC = 0

hFE1

DC Current Gain

VCE = 5 V, IC = 2 A

hFE2

VCE = 5 V, IC = 5 A

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 2 A, IB = 0.4 A

IC = 5 A, IB = 1 A

IC = 5 A, IB = 1 A, TA = 100°C

IC = 8 A, IB = 2 A

VBE(sat)

Base-Emitter Saturation Voltage

IC = 2 A, IB = 0.4 A

1.2

IC = 5 A, IB = 1 A

1.6

IC = 5 A, IB = 1 A, TA = 100°C

2.0

Diode Forward Voltage

IC = 3 A

2.5

Cob

Output Capacitance

VCB = 10 V, IE = 0, f = 1 MHz

tSTG

Storage Time

VCC = 125 V, IC = 5 A,

IB1 = -IB2 = 1 A, RL = 50 Ω

3.0

µs

Fall Time

0.7

µs

tSTG

Storage Time

VCC = 30 V, IC = 5 A, L=200 µH

IB1=1 A, RBB = 0 Ω,

VBE(OFF)= -5 V,

VCLAMP = 250 V

2.3

µs

Fall Time

150

Classification

hFE1

15 ~ 28

26 ~ 39

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