8 GHz Wideband NPN Chip – 2SC5635

 

Silicon NPN Low Power Planar RF Transistor in bare die form

Rev 1.0

02/07/19

High Power Gain

Low Operating Voltage

Low Noise

Wide Transition Frequency

 

 

 

 

 

 

NPN transistor in unencapsulated chip form. It is

primarily intended for use in RF wideband amplifiers,

such as in aerial amplifiers, radar systems,

oscilloscopes, spectrum analyzers, etc. The transistor

features low intermodulation distortion and high power

gain; due to its very high transition frequency, it also

has excellent wideband properties and low noise up to

high frequencies. Closest available PNP complement

is BFT92.

Description

Features:

Die Dimensions in µm (mils)

 

360 (14.17)

E

B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Die Size (Unsawn)

360 x 360

14.17 x 14.17

µm

mils

Base & Emitter

Bond Pad Size

90 Ø

3.54 Ø

µm

mils

Die Thickness

180 (±20)

7.09 (±0.78)

µm

mils

Top Metal Composition

Al-Si

Back Metal Composition

AuAsAu

Ordering Information

The following part suffixes apply:

No suffix - MIL-STD-750 /2072 Visual Inspection

“H” - MIL-STD-750 /2072 Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-750 /2072 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

E = EMITTER, B = BASE

CHIP BACKSIDE IS COLLECTOR

Supply Formats:

Mechanical Specification

Default – Die in Waffle Pack (400 per tray capacity)

Sawn Wafer on Tape – By specific request

Unsawn Wafer – By specific request

With additional electrical selection – Specific request

Sawn as pairs or adjacent pair pick – Specific request

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