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PNP SILICON PLANAR TRANSISTOR
CD9015
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Emitter Voltage
VCEO
50
V
Collector -Base Voltage
VCBO
50
V
Emitter Base Voltage
VEBO
5.0
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC
625
mW
Operating And Storage Junction
Tj, Tstg
-55 to +150
deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector -Emitter Voltage
VCEO
IC=1mA, IB=0
50
-
-
V
Collector -Base Voltage
VCBO
IC=100uA, IE=0
50
-
-
V
Emitter Base Voltage
VEBO
IE=100uA, IC=0
5.0
-
-
V
Collector Cut off Current
ICBO
VCB=50V, IE=0
-
-
50
nA
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
-
50
nA
DC Current Gain
hFE
IC=1mA,VCE=5V
60
-
1000
Collector Emitter Saturation Voltage
VCE(Sat)
IC=100mA,IB=5mA
-
-
0.70
V
Emitter Base Saturation Voltage
VBE(Sat)
IC=100mA,IB=5mA
-
-
1.0
V
Dynamic Characteristics
Output Capacitance
Cob
VCB=10V,f=1MHz
-
-
3.50
pF
Transition Frequency
ft
VCE=5V,IC=10mA,
125
-
-
MHz
f=100MHz
Noise Figure
NF
VCE=5V, IC=200uA
-
-
4.0
dB
f=1KHz
hFE CLASSIFICATION
A : 60-150,
B : 100-300,
C : 200-600,
D : 400-1000,
D1 : 400-630,
D2 : 570-840,
D3 : 760-1000,
E : >800
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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