MBR8045 datasheet(1/3 Pages) GENESIC

Part #	MBR8045

Description	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 45 V - 100 V

IF(AV) = 80 A

Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

MBR8045(R)

MBR8060(R)

Unit

Repetitive peak reverse voltage VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBR8045(R)

MBR8060(R)

Unit

Average forward current (per

pkg)

IF(AV)

80

A

Maximum forward voltage

(per leg)

0.75

0.78

1

10

20

Thermal characteristics

Thermal resistance, junction-

case (per leg)

RΘJC

0.50

°C/W

Inch ponds

(in-pb)

2. Reverse polarity (R): Stud is anode.

20

-55 to 150

MBR8045 thru MBR80100R

Tj = 25 °C

IFM = 80 A, Tj = 25 °C

Conditions

MBR80100(R)

80

50

MBR8080(R)

-55 to 150

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

VF

-55 to 150

MBR80100(R)

1

MBR8080(R)

0.50

Tj = 150 °C

0.50

0.84

20

mA

V

-55 to 150

Conditions

100

70

100

80

• Types from 45 V to 100 V V

RRM

TC = 125 °C

80

Peak forward surge current

(per leg)

IFSM

tp = 8.3 ms, half sine

1000

A

Tj = 100 °C

10

Mounting torque

30

C

A

C

Stud Stud

(R)

C

A

C

Stud Stud

(R)

DO- 5 (DO-203AB)

J

K

G

F

A

E

D

P

N

B

C

M

Inches

Millimeters

Min

Max

Min

Max

A

1/4 –28 UNF

B

0.669

0.687

17.19

17.44

C

-----

0.794

-----

20.16

D

-----

1.020

-----

25.91

E

0.422

0.453

10.72

11.50

F

0.115

0.200

2.93

5.08

G

-----

0.460

-----

11.68

J

-----

0.280

-----

7.00

K

0.236

-----

6.00

-----

M

-----

0.589

-----

14.96

N

-----

0.063

-----

1.60

P

0.140

0.175

3.56

4.45

1

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/mbr8045.pdf

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