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MBR6010 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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MBR6010 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page ![]() VRRM = 45 V - 100 V IF = 60 A Features • High Surge Capability DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol MBR6045 (R) MBR6060 (R) Unit Repetitive peak reverse voltage VRRM 45 60 V RMS reverse voltage VRMS 32 42 V DC blocking voltage VDC 45 60 V Continuous forward current IF 60 60 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol MBR6045 (R) MBR6060(R) Unit Diode forward voltage 0.65 0.75 5 5 150 150 Thermal characteristics Thermal resistance, junction - case RthJC 1.0 1.0 °C/W -55 to 150 -55 to 150 Conditions TC = 25 °C, tp = 8.3 ms 100 70 100 80 -55 to 150 MBR60100 (R) 5 5 MBR6080 (R) 1.0 VR = 20 V, Tj = 125 °C 1.0 0.84 0.84 150 150 mA V MBR6045 thru MBR60100R VR = 20 V, Tj = 25 °C IF = 60 A, Tj = 25 °C TC ≤ 100 °C Conditions MBR60100 (R) 80 50 MBR6080 (R) 700 700 -55 to 150 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 60 60 700 Silicon Power Schottky Diode Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A 700 • Types from 45 V to 100 V V RRM Reverse current IR VF 2. Reverse polarity (R): Stud is anode. C A A C Stud Stud (R) C A A C Stud Stud (R) DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 C ----- 0.794 ----- 20.16 D ----- 1.020 ----- 25.91 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 G ----- 0.460 ----- 11.68 J ----- 0.280 ----- 7.00 K 0.236 ----- 6.00 ----- M ----- 0.589 ----- 14.96 N ----- 0.063 ----- 1.60 P 0.140 0.175 3.56 4.45 1 Oct. 2018 http://www.diodemodule.com/silicon_products/studs/mbr6045.pdf |
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