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MBR6010 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # MBR6010
Description  Silicon Power Schottky Diode
PDF  3 Pages
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MBR6010 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  MBR6010 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. MBR6010 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. MBR6010 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 45 V - 100 V
IF = 60 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
MBR6045 (R) MBR6060 (R)
Unit
Repetitive peak reverse voltage
VRRM
45
60
V
RMS reverse voltage
VRMS
32
42
V
DC blocking voltage
VDC
45
60
V
Continuous forward current
IF
60
60
A
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
MBR6045 (R)
MBR6060(R)
Unit
Diode forward voltage
0.65
0.75
5
5
150
150
Thermal characteristics
Thermal resistance, junction -
case
RthJC
1.0
1.0
°C/W
-55 to 150
-55 to 150
Conditions
TC = 25 °C, tp = 8.3 ms
100
70
100
80
-55 to 150
MBR60100 (R)
5
5
MBR6080 (R)
1.0
VR = 20 V, Tj = 125 °C
1.0
0.84
0.84
150
150
mA
V
MBR6045 thru MBR60100R
VR = 20 V, Tj = 25 °C
IF = 60 A, Tj = 25 °C
TC ≤ 100 °C
Conditions
MBR60100 (R)
80
50
MBR6080 (R)
700
700
-55 to 150
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
60
60
700
Silicon Power
Schottky Diode
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
A
700
• Types from 45 V to 100 V V
RRM
Reverse current
IR
VF
2. Reverse polarity (R): Stud is anode.
C
A
A
C
Stud Stud
(R)
C
A
A
C
Stud Stud
(R)
DO- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches
Millimeters
Min
Max
Min
Max
A
1/4 –28 UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
1
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/mbr6045.pdf


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