MP4411 datasheet(1/7 Pages) TOSHIBA

Part #	MP4411

Description	TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

1 / 7 page

MP4411

2004-07-01

1

TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)

MP4411

High Power, High Speed Switching Applications

For Printer Head Pin Driver and Pulse Motor Driver

For Solenoid Driver

• 4-V gate drivability

• Small package by full molding (SIP 12 pin)

• High drain power dissipation (4-device operation)

: PT = 28 W (Tc = 25°C)

• Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.)

• High forward transfer admittance: |Yfs| = 3.5 S (typ.)

• Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V)

IDSS = 100 µA (max) (VDS = 100 V)

• Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

100

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

100

V

Gate-source voltage

VGSS

±20

V

DC

ID

3

Drain current

Pulse

IDP

12

A

Drain power dissipation

(1-device operation, Ta = 25°C)

PD

2.2

W

Ta = 25°C

4.4

Drain power dissipation

(4-device operation)

Tc = 25°C

PDT

28

W

Single pulse avalanche energy

(Note 1)

EAS

140

mJ

Avalanche current

IAR

3

A

1 device

operation

EAR

0.22

Repetitive avalanche

energy

(Note 2) 4 devices

operation

EART

0.44

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1: Condition for avalanche energy (single pulse) measurement

VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A

Note 2: Repetitive rating; pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32C1D

Weight: 3.9 g (typ.)

Similar Part No. - MP4411

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	MP4411	175Kb / 7P	High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
Toshiba Semiconductor	MP4411	175Kb / 7P	High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver

More results

Similar Description - MP4411

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	MP4403	328Kb / 7P	TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
	2SJ620	225Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV)
	2SK3407	230Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
	2SK3471	104Kb / 3P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
	2SK3543	234Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
	2SK3387	216Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
	MP6404	276Kb / 11P	TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
	MP4412	199Kb / 8P	Silicon N Channel MOS Type (Four L2-pi-MOSV inOne)
	2SK2312	244Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)
	2SK2312	715Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)

More results

MP4411 Datasheet(PDF) 1 Page - Toshiba Semiconductor

MP4411 Datasheet(HTML) 1 Page - Toshiba Semiconductor

Similar Part No. - MP4411

Similar Description - MP4411

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL