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IXTP05N100P Datasheet(PDF) 4 Page - IXYS Corporation |
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IXTP05N100P Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 7 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA05N100P IXTP05N100P Fig. 7. Input Admittance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS - Volts TJ = 125 oC 25 oC - 40 oC Fig. 8. Transconductance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.20.3 0.40.5 0.60.7 0.8 ID - Amperes TJ = - 40 oC 125 oC 25 oC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.4 0.5 0.6 0.7 0.8 0.9 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 1 234 5 6789 QG - NanoCoulombs VDS = 500V I D = 0.25A I G = 1mA Fig. 11. Capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 0.01 0.1 1 10 10 100 1000 VDS - Volts TJ = 150 oC TC = 25 oC Single Pulse 1ms RDS(on) Limit 10ms DC 100μs |
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