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IXTU4N60P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTU4N60P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2017 IXYS CORPORATION, All Rights Reserved DS99423F(6/17) IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P V DSS = 600V I D25 = 4A R DS(on) 2 Symbol Test Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 600 V V GS(th) V DS = VGS, ID = 100μA 3.0 5.5 V I GSS V GS = 30V, VDS = 0V 100 nA I DSS V DS = VDSS, VGS = 0V 1 A T J = 125C 50 A R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 2 Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 150C 600 V V DGR T J = 25 C to 150C, R GS = 1M 600 V V GSS Continuous 30 V V GSM Transient 40 V I D25 T C = 25C4 A I DM T C = 25C, Pulse Width Limited by TJM 10 A I A T C = 25C4 A E AS T C = 25C 150 mJ dv/dt I S I DM, VDD VDSS, TJ 150°C 10 V/ns P D T C = 25C90 W T J -55 ... +150 C T JM 150 C T stg -55 ... +150 C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C F C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 N/lb M d Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in Weight TO-251 0.40 g TO-252 0.35 g TO-263 2.50 g TO-220 3.00 g G = Gate D = Drain S = Source Tab = Drain G D S TO-220 (IXTP) D (Tab) TO-252 (IXTY) G S TO-263 (IXTA) G D (Tab) S D (Tab) TO-251 (IXTU) D (Tab) G S D Features International Standard Packages Low Q G Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated OBSOLETE IXTY4N60P IXTA4N60P IXTP4N60P |
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