IXTY05N100 datasheet(1/6 Pages) IXYS

Part #	IXTY05N100

Description	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1000

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1000

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

750

mA

I

DM

T

C = 25C, Pulse Width Limited by TJM

3A

I

A

T

C = 25C1

A

E

AS

T

C = 25C

100

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ 150C

3

V/ns

P

D

T

C = 25C40

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting force

1.13 / 10

Nm/lb.in.

Weight

TO-251

0.40

g

TO-252

0.35

g

DS100102B(9/17)

High Voltage

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTU05N100

IXTY05N100

V

DSS

= 1000V

I

D25

= 750mA

R

DS(on) 

 17



Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

1000

V

GS(th)

V

DS = VGS, ID = 250A

2.5

4.5

V

I

GSS

V

GS =  30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 125C

500

A

R

DS(on)

V

GS = 10V, ID = 375mA, Note 1

17



Features

 International Standard Packages

 Fast Switching Times

 Avalanche Rated

 R

ds(on) HDMOS

TM

Process

 Rugged Polysilicon Gate Cell structure

 Extended FBSOA

Advantages

 High Power Density

 Space Savings

Applications

 Switch-Mode and Resonant-Mode

Power Supplies

 Flyback Inverters

 DC Choppers

G = Gate

D

= Drain

S = Source

TAB = Drain

TO-252

(IXTY)

S

G

TO-251

(IXTU)

D

S

G

D (TAB)

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IXTY05N100 Datasheet(PDF) 1 Page - IXYS Corporation

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