IRF630MFP datasheet(1/9 Pages) STMICROELECTRONICS

Part #	IRF630MFP

Description	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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October 2001

IRF630M

IRF630MFP

N-CHANNEL 200V - 0.35

Ω - 9A TO-220/TO-220FP

MESH OVERLAY™ MOSFET

s

TYPICAL RDS(on) = 0.35 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the compa-

ny’s consolidated strip layout-based MESH OVER-

LAY™ process. This technology matches and

improves the performances compared with standard

parts from various sources.

Isolated TO-220 option simplifies assembly and cuts

risk of accidental short circuit in crowded monitor

PCB’s.

.APPLICATIONS

s

MONITOR DISPLAYS

s

GENERAL PURPOSE SWITCH

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

IRF630M

200 V

< 0.40

Ω

9 A

IRF630FPM

200 V

< 0.40

Ω

9 A

Symbol

Parameter

Value

Unit

IRF630M

IRF630MFP

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

200

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

9

9 (**)

A

ID

Drain Current (continuos) at TC = 100°C

5.7

5.7 (**)

A

IDM (q)

Drain Current (pulsed)

36

A

PTOT

Total Dissipation at TC = 25°C

75

30

W

Derating Factor

0.6

0.24

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(**) Limited only by Maximum Temperature Allowed

INTERNAL SCHEMATIC DIAGRAM

1

2

3

TO-220

1

2

3

TO-220FP

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IRF630MFP Datasheet(PDF) 1 Page - STMicroelectronics

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