RN1973

2004-05-20

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1973

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications.

• Two devices are incorporated into an Ultra-Super-Mini (6-pin) package

• Incorporating a bias resistor into a transistor reduces the parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

• Diverse resistance values are available suited to a range of different circuit

designs.

Equivalent Circuit and Bias Resistor Values

R1: 47 kΩ (Q1, Q2 common)

Note:

Total rating

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2J1B

Weight: 0.0068 g (typ.)

Equivalent Circuit

(top view)

6

5

4

1

2

3

Q2

Q1

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

R1

B

C

E