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FST160200 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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FST160200 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page ![]() VRRM = 150 V - 200 V IF(AV) = 160 A Features • High Surge Capability TO-249AB Package • Isolated to Plate • Not ESD Sensitive Parameter Symbol FST160150 Unit Repetitive peak reverse voltage VRRM 150 V RMS reverse voltage VRMS 106 V DC blocking voltage VDC 150 V Operating temperature Tj -55 to 150 °C Storage temperature Tstg -55 to 150 °C Parameter Symbol FST160150 Unit Average forward current (per pkg) IF(AV) 160 A Maximum instantaneous forward voltage (per leg) 0.88 1 10 30 Thermal characteristics Thermal resistance, junction - case (per leg) RΘJC 0.50 °C/W Silicon Power Schottky Diode Electrical characteristics, at Tj = 25 °C, unless otherwise specified TC = 125 °C 160 Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 1000 1000 A Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) IR VF Conditions Tj = 100 °C • Types from 150 V to 200V V RRM 30 FST160150 thru FST160200 Tj = 25 °C IFM = 80 A, Tj = 25 °C 10 Conditions 200 141 FST160200 -55 to 150 Maximum ratings, at Tj = 25 °C, unless otherwise specified 1 FST160200 0.50 Tj = 150 °C 0.92 mA V 200 -55 to 150 Inches Millimeters Min Max Min Max A 1.995 2.005 50.67 50.93 B 0.300 0.325 7.62 8.26 C 0.495 0.505 12.57 12.83 D 0.182 0.192 4.62 4.88 E 0.990 1.010 25.15 26.65 F 2.390 2.410 60.71 61.21 G 1.495 1.525 37.90 38.70 H 0.114 0.122 2.90 3.10 J ----- 0.420 ----- 10.67 K 0.256 0.275 6.5 7.0 L 0.490 0.510 12.45 12.95 M 0.330 0.350 8.38 8.90 N 0.175 0.195 4.45 4.95 P 0.035 0.045 0.89 1.14 R 0.445 0.455 11.30 11.56 Q 0.890 0.910 22.61 23.11 F H P J G C B A L E Q M R N D K 1 Oct. 2018 http://www.diodemodule.com/silicon_products/modules/fst160150.pdf |
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