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HMS35DN10DA Datasheet(PDF) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HMS35DN10DA Datasheet(HTML) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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1 / 5 page  N-Channel Super Trench Power MOSFET Description The HMS35DN10DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =35A RDS(ON)=18mΩ (typical) @ VGS=10V RDS(ON)=22mΩ (typical) @ VGS=4.5V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HMS35DN10DA HMS35DN10DA DFN5X6-8L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 35 A Drain Current-Continuous(TC=100 ) ℃ ID (100℃) 24.8 A Pulsed Drain Current IDM 140 A Maximum Power Dissipation PD 50 W Derating factor 0.4 W/℃ Single pulse avalanche energy (Note 5) EAS 200 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 2.5 /W ℃ Top View DFN 5X6 Schematic Diagram HMS35DN10DA |
Similar Part No. - HMS35DN10DA |
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Similar Description - HMS35DN10DA |
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