© 2013 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJPF2145 Rev. 1.0.0

1

April 2013

FJPF2145

ESBC Features (FDC655 MOSFET)

• Low Equivalent On Resistance

• Very Fast Switch: 150 kHz

• Wide RBSOA: Up to 1100 V

• Avalanche Rated

• Low Driving Capacitance, no Miller Capacitance

• Low Switching Losses

• Reliable HV Switch: No False Triggering due to

High dv/dt Transients

Applications

• High-Voltage, High-Speed Power Switches

• Emitter-Switched Bipolar/MOSFET Cascode

• Smart Meters, Smart Breakers, SMPS,

HV Industrial Power Supplies

• Motor Drivers and Ignition Drivers

Ordering Information

Notes:

1. Figure of Merit.

2. Other Fairchild MOSFETs can be used in this ESBC application.

(1)

0.21 V

2 A

0.105 Ω

Part Number

Marking

Package

Packing Method

FJPF2145TU

J2145

TO-220F

TUBE

1

2

3

B

C

E

Figure 2. Internal Schematic Diagram

C

B

G

S

FDC655

FJPF2145

Figure 1. Pin Configuration

1

1.Base

2.Collector

3.Emitter

TO-220F

Description

The FJPF2145 is a low-cost, high-performance power

switch designed to provide the best performance when

power supplies, motor drivers, smart grid, or ignition

switches. The power switch is designed to operate up to

1100 volts and up to 5 amps, while providing exception-

ally low on-resistance and very low switching losses.

FET is a low-voltage, low-cost, surface-mount device that

combines low-input capacitance and fast switching. The

ing power because it does not have Miller capacitance.

The FJPF2145 provides exceptional reliability and a large

operating range due to its square reverse-bias-safe-oper-

ating-area (RBSOA) and rugged design. The device is

avalanche rated and has no parasitic transistors, so is not

prone to static dv/dt failures.

The power switch is manufactured using a dedicated

high-voltage bipolar process and is packaged in a high-

voltage TO-220F package.