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FMBM5551 Datasheet(PDF) 3 Page - ON Semiconductor

Part # FMBM5551
Description  NPN General-Purpose Amplifier
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FMBM5551 Datasheet(HTML) 3 Page - ON Semiconductor

  FMBM5551 Datasheet HTML 1Page - ON Semiconductor FMBM5551 Datasheet HTML 2Page - ON Semiconductor FMBM5551 Datasheet HTML 3Page - ON Semiconductor FMBM5551 Datasheet HTML 4Page - ON Semiconductor FMBM5551 Datasheet HTML 5Page - ON Semiconductor FMBM5551 Datasheet HTML 6Page - ON Semiconductor  
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3
Typical Performance Characteristics
Figure 3. Typical Pulsed Current Gain
vs. Collector Current
Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base-Emitter On Voltage
vs. Collector Current
Figure 7. Collector Cut-Off Current
vs. Ambient Temperature
Figure 8. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
Ω
vs Collector Current
0.1
0.2
0.5
1
2
5
10
20
50
100
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
C
125 °C
25 °C
- 40 °C
V
= 5V
CE
β
β
Ω
Voltage vs Collector Current
110
100
200
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRE NT (mA)
C
25 °C
- 40 °C
125 °C
β = 10
β
Ω
β
Voltage vs Collector Current
110
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
β = 10
25 °C
- 40 °C
125 °C
Ω
β
β
Collector Current
0.1
1
10
100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
C
V
= 5V
CE
25 °C
- 40 °C
125 °C
Ω
25
50
75
100
125
1
10
50
T - AMBIE NT TEMP ERATURE ( C)
A
°
V
= 100V
CB
β
β
Between Emitter-Base
0.1
1
10
100
1000
160
180
200
220
240
260
RESISTANCE (k )
Ω
I
= 1.0 mA
C
β
β



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