TC3889
PRE.2_04/27/2005
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 1/1
5W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
• 5W Typical Output Power
• 12dB Typical Linear Power Gain at 2.0GHz
• High Linearity:
IP3 = 47 dBm Typical
• High Power Added Efficiency:
Nominal PAE of 35%
• Breakdown Voltage: BVDGO ≥ 18V
• Wg = 12 mm
• 100 % DC Tested
• Suitable for High Reliability Application
DESCRIPTION
The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The flange ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.0 GHz)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Gain Compression Point
VDS = 10 V
36
37
dBm
GL
Linear Power Gain
VDS = 10 V
12
dB
IP3
Intercept Point of the 3rd-order Intermodulation
VDS = 10 V, *PSCL = 26 dBm
47
dBm
PAE
Power Added Efficiency at 1dB Compression Power
35
%
IDS
Drain-Source Current at VDS = 10 V
1300
mA
BVDGO
Drain-Gate Breakdown Voltage at IDGO = 6mA
18
22
Volts
Rth
Thermal Resistance
2.7
°C/W
Note: *PSCL: Output Power of Single Carrier Level.
PHOTO ENLARGEMENT
Preliminary
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