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SM10S Datasheet(PDF) 1 Page - Shanghai Yint Electronic Co., Ltd |
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SM10S Datasheet(HTML) 1 Page - Shanghai Yint Electronic Co., Ltd |
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1 / 3 page ![]() Transient Voltage Suppression Diodes Trustworthy electronic circuit protection expert Surface Mount – 8000W > SM10S Series www.yint.com.cn Rev:19.3 1 SM10S Series Features ● Optimized glass passivated chip ● TJ = 175 °C capability suitable for high reliability and automotive requirement ● 8000 W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 % ● Meet ISO 7637-2 5a/5b and ISO 16750 load dump test (varied by test condition) ● Low leakage ● Uni-directional polarity ● Low forward voltage drop ● Excellent clamping capability ● Very fast response time ● AEC-Q101 qualified ● RoHS compliant Mechanical Data ● Case: DO-218AB ● Epoxy: UL 94V-0 rate flame retardant ● Polarity: Heatsink is anode DO-218AB Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Peak power dissipation with a 10/1000μs waveform1 PPP 8000 Watts Peak pulse current wih a 10/1000μs waveform Ipp See Next Table A Power dissipation on infinite heatsink at TL = 25 °C1 PD 8 W Peak forward surge current 8.3 ms single half sine- IFSM 700 A Operating junction and storage temperature range TJ TSTG -55 to +175 °C Note: 1. Non-repetitive current pulse per Fig.2 and derated above TA= 25 °C per Fig.1 Electrical Characteristics (TA = 25 °C unless otherwise noted) Part Number (Uni) Reverse Stand off Voltage VR (Volts) Breakdown Voltage VBR (Volts)@IT Test Current IT(mA) Maximum Reverse Leakage IR@ VR(μA) Maximum IR @VRWM TJ=175 (uA) Maximum Peak Pulse Current I pp (A) Maximum Clamping Voltage VC @ I pp (V) Min .V Max .V SM10S33A 33 36.70 40.60 5 10 150 145.0 55.2 SM10S36A 36 40.00 44.20 5 10 150 132.5 60.4 |
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