IRHG9110

Pre-Irradiation

2

www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-0.75

ISM

Pulse Source Current (Body Diode) ➀

—

—

-3.0

VSD

Diode Forward Voltage

—

—

-2.5

V

trr

Reverse Recovery Time

—

—

90

nS

Tj = 25°C, IF = -0.75A, di/dt ≥ -100A/µs

QRR Reverse Recovery Charge

—

—

257

nC

VDD ≤ -25V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Thermal Resistance (Per Die)

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

17

RthJA

Junction-to-Ambient

—

—

90

Typical socket mount

°C/W

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.11

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

1.2

VGS = -12V, ID = -0.75A

Resistance

—

—

1.1

VGS = -12V, ID =- 0.5A

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

0.6

—

—

S ( )VDS > -15V, IDS = -0.5A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS= -80V, VGS= 0V

—

—

-250

VDS = -80V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = - 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = 20V

Qg

Total Gate Charge

—

—

15

VGS = -12V, ID = -0.75A,

Qgs

Gate-to-Source Charge

—

—

4.0

nC

VDS = -50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

4.3

Turn-On Delay Time

—

—

22

VDD = -50V, ID = -0.75A,

tr

Rise Time

—

—

19

VGS = -12V, RG = 24Ω

Turn-Off Delay Time

—

—

66

tf

Fall Time

—

—

51

LS + LD

Total Inductance

—

10

—

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

—

335

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

100

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

22

—

nA

➃

nH

ns

µA

Ω