2N60 datasheet(2/2 Pages) KEXIN

2 / 2 page

www.kexin.com.cn

SMD Type

MOSFET

DIP Type

Electrical Characteristics Ta = 25

Parameter

Symbol

Test conditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

VGS =0V, ID = 250 ìA

600

VDS =600 V, VGS =0V

VDS =480 V, TC =125

100

Gate-Body Leakage Current, Forward

IGSSF

VGS =30V, VDS = 0 V

100

Gate-Body Leakage Current, Reverse

IGSSR

VGS =-30 V, VDS =0V

-100

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID =250 ìA

2.0

4.0

Static Drain-Source On-Resistance

RDS(on)

VGS =10V, ID =1A

3.8

5.0

Forward Transconductance

gFS

VDS =50V, ID =1A * 1

2.25

Input Capacitance

Ciss

270

350

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Total Gate Charge

911

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

4.3

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode Forward

Current

ISM

Drain-Source Diode Forward Voltage

VSD

VGS =0V, IS = 2.0 A

1.4

Reverse Recovery Time

trr

180

Reverse Recovery Charge

Qrr

0.72

* 1. Pulse Test : Pulse width

300µs, Duty cycle

* 2. Essentially independent of operating temperature.

VDS =480 V, ID =2.4A, VGS =10V------

*1,2

VGS =0V, IS =2.4 A,

dIF /dt= 100 A/

s* 1

IDSS

Zero Gate Voltage Drain Current

VDS =25V, VGS = 0 V,f= 1.0 MHz

VDD =300 V, ID =2.4 A, RG =25

--------

*1,2

2N60

2N60 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

2N60 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2

Datasheet Download

Link URL