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SSM9930M
10/21/2004 Rev.1.01
P-channel Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
-30
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C,ID=-1mA
-
-0.037
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-5A
-
-
55
m
Ω
VGS=-4.5V, ID=-3A
-
-
100
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
4.8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-24V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=-5A
-
7.3
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.8
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
10.8
-
ns
tr
Rise Time
ID=-1A
-
7.6
-
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS =-10V
-
19.6
-
ns
tf
Fall Time
RD=15Ω
-
17.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
486
-
pF
Coss
Output Capacitance
VDS=-25V
-
185.5
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
133.8
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-1.7A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
± 25V
±100
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