MAC16HCD, MAC16HCM, MAC16HCN

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance

— Junction to Case

— Junction to Ambient

R

θJC

R

θJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

TJ = 25°C

(VD = Rated VDRM, VRRM, Gate Open)

TJ = 125°C

IDRM,

IRRM

—

—

—

—

0.01

2.0

mA

ON CHARACTERISTICS

Peak On–State Voltage(1) (ITM = "21 A Peak)

VTM

—

—

1.6

Volts

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IGT

10

10

10

16

18

22

50

50

50

mA

Holding Current (VD = 12 V, Gate Open, Initiating Current = "150 mA)

IH

—

20

50

mA

Latch Current (VD = 12 V, IG = 50 mA)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IL

—

—

—

33

36

33

60

80

60

mA

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

VGT

0.5

0.5

0.5

0.80

0.73

0.82

1.5

1.5

1.5

Volts

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/µs, CL = 10 µF

Gate Open, TJ = 125°C, f = 250 Hz, with Snubber) LL = 40 mH

(di/dt)c

15

—

—

A/ms

Critical Rate of Rise of Off–State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

dv/dt

750

—

—

V/

µs

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40

µsec; diG/dt = 200 mA/µsec; f = 60 Hz

di/dt

—

—

10

A/

µs

(1) Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.