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SSM3K16CTC Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM3K16CTC Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 8 page ![]() SSM3K16CTC 1 MOSFETs Silicon N-Channel MOS SSM3K16CTC SSM3K16CTC SSM3K16CTC SSM3K16CTC Start of commercial production 2015-12 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching • Analog Switches 2. 2. 2. 2. Features Features Features Features (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 5.6 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.0 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.0 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.2 Ω (max) (@VGS = 4.5 V) 3. 3. 3. 3. Packaging and Pin Assignment Packaging and Pin Assignment Packaging and Pin Assignment Packaging and Pin Assignment CST3C 2017-11-30 Rev.2.0 ©2016-2017 Toshiba Electronic Devices & Storage Corporation |
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