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SSM3K72KFS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM3K72KFS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 9 page  SSM3K72KFS 1 MOSFETs Silicon N-Channel MOS SSM3K72KFS SSM3K72KFS SSM3K72KFS SSM3K72KFS Start of commercial production 2016-01 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching 2. 2. 2. 2. Features Features Features Features (1) AEC-Q101 qualified (Note 1) (2) ESD(HBM) level 2 kV (3) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) Note 1: For detail information, please contact to our sales. 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit SSM 1: Gate 2: Source 3: Drain 2018-04-18 Rev.2.0 ©2016-2018 Toshiba Electronic Devices & Storage Corporation |
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